Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN

Semiconductor Science and Technology

Volumn 19, Issue 8, 2004, Pages 975-979

  Reddy, V Rajagopal ^a   Seong, Tae Yeon ^b  

^a UNIVERSITY OF MYSORE   (India)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; GOLD; SCHOTTKY BARRIER DIODES; SURFACE ROUGHNESS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BUFFERED OXIDE ETCH (BOE); ELECTRICAL PROPERTIES; NON-LINEAR BEHAVIOR; RMS ROUGHNESS; STRUCTURAL PROPERTIES;

OHMIC CONTACTS;

EID: 4043181854     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/8/005     Document Type: Article

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