Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

Journal of Electronic Materials

Volumn 30, Issue 2, 2001, Pages 94-98

  Jang, Ja Soon ^a   Kim, Dong Jun ^a   Park, Seong Ju ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; GOLD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHENIUM; SCHOTTKY BARRIER DIODES; SURFACE TREATMENT; THERMODYNAMIC STABILITY;

SPECIFIC CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 0035251472     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0106-z     Document Type: Article

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