Defect evolution in Co-implanted Si during annealing at 1000 °C studied using variable-energy positrons and Rutherford backscattering

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 19, 1996, Pages 13955-13961

  Knights, A ^a   Carlow, G ^a   Zinke Allmang, M ^a   Simpson, P ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001587344     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.13955     Document Type: Article

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