Fast thermal cycling-enhanced electromigration in power metallization

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 2, 2004, Pages 246-255

  Nguyen, H V ^a   Salm, Cora ^a   Krabbenborg, B H ^b   Bisschop, J ^b   Mouthaan, A J Ton ^a   Kuper, Fred G ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Electromigration; Extrusion; Fast thermal cycling; Interlayer dielectric; Short circuits

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIELECTRIC MATERIALS; DIFFUSION; EXTRUSION; FAILURE ANALYSIS; HEATING; METALLIZING; MICROCRACKS; SHORT CIRCUIT CURRENTS; THERMAL CYCLING;

CROSS-SECTION; FAST THERMAL CYCLING; INTERLAYER DIELECTRIC; THERMAL CYCLING STRESS;

ELECTROMIGRATION;

EID: 4043159186     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.826589     Document Type: Article

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