Channel cracking technique for toughness measurement of brittle dielectric thin films on silicon substrates

Materials Research Society Symposium - Proceedings

Volumn 516, Issue , 1998, Pages 331-336

  Ma, Qing ^a   Xie, Joseph ^a   Chao, Sam ^a   El Mansy, Safaa ^a   McFadden, Robert ^a   Fujimoto, Harry ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRACK INITIATION; RESIDUAL STRESSES; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; STRESS ANALYSIS; SUBSTRATES; THERMAL EXPANSION; THIN FILMS; TOUGHNESS;

CHANNEL CRACKING; THERMAL EXPANSION MISMATCH;

DIELECTRIC FILMS;

EID: 0032318497     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-516-331     Document Type: Conference Paper

References (4)