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Volumn 19, Issue 8, 2004, Pages 1040-1052

Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTROOPTICAL DEVICES; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DOPING; SUBSTRATES; TERNARY SYSTEMS;

EID: 4043120997     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/8/015     Document Type: Article
Times cited : (87)

References (73)
  • 7
    • 0038051653 scopus 로고    scopus 로고
    • Efficiency and power density potential of thermophotovoltaic systems using low bandgap photovoltaic cells
    • ed T J Coutts, C S Allman and J P Benner (Woodbury, NY: AIP)
    • Heinzel A, Luther J, Stollwerck G and Zenker M 1998 Efficiency and power density potential of thermophotovoltaic systems using low bandgap photovoltaic cells Thermophotovoltaic Generation of Electricity: 4th NREL Conf. (AIP Conference Proceedings vol 460) ed T J Coutts, C S Allman and J P Benner (Woodbury, NY: AIP) pp 103-12
    • (1998) Thermophotovoltaic Generation of Electricity: 4th NREL Conf. (AIP Conference Proceedings) , vol.460 , pp. 103-112
    • Heinzel, A.1    Luther, J.2    Stollwerck, G.3    Zenker, M.4
  • 12
    • 0031549493 scopus 로고    scopus 로고
    • Study of Zn diffusion into GaSb from the vapour and liquid phase
    • Bett A W, Keser S and Sulima O V 1997 Study of Zn diffusion into GaSb from the vapour and liquid phase J. Cryst. Growth 181 9-16
    • (1997) J. Cryst. Growth , vol.181 , pp. 9-16
    • Bett, A.W.1    Keser, S.2    Sulima, O.V.3
  • 13
  • 15
    • 0346408305 scopus 로고    scopus 로고
    • The physics and technology of gallium antimonide: An emerging optoelectronic material
    • Dutta P S, Bhat H L and Kumar V 1997 The physics and technology of gallium antimonide: an emerging optoelectronic material J. Appl. Phys. 81 5821-70
    • (1997) J. Appl. Phys. , vol.81 , pp. 5821-5870
    • Dutta, P.S.1    Bhat, H.L.2    Kumar, V.3
  • 16
    • 0035249214 scopus 로고    scopus 로고
    • Efficiency and power density potential of combustion-driven thermophotovoltaic systems using GaSb photovoltaic cells
    • Zenker M, Heinzel A, Stollwerck G, Ferber J and Luther J 2001 Efficiency and power density potential of combustion-driven thermophotovoltaic systems using GaSb photovoltaic cells IEEE Trans. Electron Devices 48 367-76
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 367-376
    • Zenker, M.1    Heinzel, A.2    Stollwerck, G.3    Ferber, J.4    Luther, J.5
  • 17
    • 0035254388 scopus 로고    scopus 로고
    • Fabrication and simulation of GaSb thermophotovoltaic cells
    • Sulima O V and Bett A W 2001 Fabrication and simulation of GaSb thermophotovoltaic cells Sol. Energy Mater. Sol. Cells 66 533-40
    • (2001) Sol. Energy Mater. Sol. Cells , vol.66 , pp. 533-540
    • Sulima, O.V.1    Bett, A.W.2
  • 18
    • 0003426857 scopus 로고    scopus 로고
    • ed M Levinshtein, S Rumyantsev and M Shur (Singapore: World Scientific) chapter 6 (Gallium Antimonide)
    • Vul' A Ya 1996 Handbook Series on Semiconductor Parameters vol 1, ed M Levinshtein, S Rumyantsev and M Shur (Singapore: World Scientific) chapter 6 (Gallium Antimonide) pp 125-46
    • (1996) Handbook Series on Semiconductor Parameters , vol.1 , pp. 125-146
    • Vul, A.Ya.1
  • 20
    • 0027608745 scopus 로고
    • Review: Gallium antimonide device related properties
    • Milnes A G and Polyakov A Y 1993 Review: gallium antimonide device related properties Solid-State Electron. 36 803-18
    • (1993) Solid-state Electron. , vol.36 , pp. 803-818
    • Milnes, A.G.1    Polyakov, A.Y.2
  • 21
    • 0019701321 scopus 로고
    • Electron transport and conduction band structure of GaSb
    • Lee H J and Woolley J C 1981 Electron transport and conduction band structure of GaSb Can. J. Phys. 59 1844
    • (1981) Can. J. Phys. , vol.59 , pp. 1844
    • Lee, H.J.1    Woolley, J.C.2
  • 22
    • 0008575453 scopus 로고
    • Some properties of p-type gallium antimonide between 15 K and 925 K
    • Leifer H N and Dunlap W C 1954 Some properties of p-type gallium antimonide between 15 K and 925 K Phys. Rev. 95 51-6
    • (1954) Phys. Rev. , vol.95 , pp. 51-56
    • Leifer, H.N.1    Dunlap, W.C.2
  • 23
    • 4043067263 scopus 로고
    • Electrical properties of gallium antimonide
    • Detwiler D P 1955 Electrical properties of gallium antimonide Phys. Rev. 97 1575-8
    • (1955) Phys. Rev. , vol.97 , pp. 1575-1578
    • Detwiler, D.P.1
  • 24
    • 4043050275 scopus 로고
    • Electrical transport mechanism in the conduction band of gallium antimonide studied from Hall-mobility and transverse-magnetorresistance measurements
    • Mathur P C and Jain S 1979 Electrical transport mechanism in the conduction band of gallium antimonide studied from Hall-mobility and transverse-magnetorresistance measurements Phys. Rev. B 19 3159-66
    • (1979) Phys. Rev. B , vol.19 , pp. 3159-3166
    • Mathur, P.C.1    Jain, S.2
  • 25
    • 0029209649 scopus 로고
    • Electron mobility in GaSb
    • Chin V W 1995 Electron mobility in GaSb Solid-State Electron. 38 59-67
    • (1995) Solid-state Electron. , vol.38 , pp. 59-67
    • Chin, V.W.1
  • 30
    • 0000534150 scopus 로고    scopus 로고
    • Empirical low-field mobility model for III-V compounds applicable in device simulation codes
    • Sotoodeh M, Khalid A H and Rezazadeh A A 2000 Empirical low-field mobility model for III-V compounds applicable in device simulation codes J. Appl. Phys. 87 2890-900
    • (2000) J. Appl. Phys. , vol.87 , pp. 2890-2900
    • Sotoodeh, M.1    Khalid, A.H.2    Rezazadeh, A.A.3
  • 34
  • 35
    • 0343349550 scopus 로고
    • GaSb films grown by vacuum chemical epitaxy using triethyl antimony and triethyl gallium sources
    • Fraas L M, McLeod P S, Partain L D and Cape J A 1987 GaSb films grown by vacuum chemical epitaxy using triethyl antimony and triethyl gallium sources J. Appl. Phys. 61 2861
    • (1987) J. Appl. Phys. , vol.61 , pp. 2861
    • Fraas, L.M.1    McLeod, P.S.2    Partain, L.D.3    Cape, J.A.4
  • 37
    • 51249171384 scopus 로고
    • N-type doping of gallium antimonide and aluminium antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
    • Subbanna S, Turtle G and Kroemer H 1988 N-type doping of gallium antimonide and aluminium antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source J. Electron. Mater. 17 297
    • (1988) J. Electron. Mater. , vol.17 , pp. 297
    • Subbanna, S.1    Turtle, G.2    Kroemer, H.3
  • 38
    • 0026413134 scopus 로고
    • Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe
    • Chen J F and Cho A Y 1991 Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe J. Cryst. Growth 111 619
    • (1991) J. Cryst. Growth , vol.111 , pp. 619
    • Chen, J.F.1    Cho, A.Y.2
  • 42
    • 4043131077 scopus 로고
    • PhD Thesis Université des Sciences et techniques du Languedoc, Montpellier
    • Cazal-Poujade A 1970 PhD Thesis Université des Sciences et techniques du Languedoc, Montpellier
    • (1970)
    • Cazal-Poujade, A.1
  • 43
    • 4043091466 scopus 로고    scopus 로고
    • Personal communication
    • Khvostikov V P 2000 Personal communication
    • (2000)
    • Khvostikov, V.P.1
  • 44
    • 4043107172 scopus 로고    scopus 로고
    • Personal communication
    • Ruiz C 2003 Personal communication
    • (2003)
    • Ruiz, C.1
  • 45
  • 46
    • 0019701321 scopus 로고
    • Electron transport and conduction band structure of GaSb
    • Lee H J and Woolley J C 1981 Electron transport and conduction band structure of GaSb Can. J. Phys. 59 1844
    • (1981) Can. J. Phys. , vol.59 , pp. 1844
    • Lee, H.J.1    Woolley, J.C.2
  • 49
    • 4043115693 scopus 로고
    • Electrical and optical properties of intermetallic compounds: II. Gallium antimonide
    • Blunt R F, Hosler W R and Frederikse H P R 1954 Electrical and optical properties of intermetallic compounds: II. Gallium antimonide Phys. Rev. 96 576
    • (1954) Phys. Rev. , vol.96 , pp. 576
    • Blunt, R.F.1    Hosler, W.R.2    Frederikse, H.P.R.3
  • 50
    • 0344835592 scopus 로고
    • Experimental investigation of conduction band of GaSb
    • Sagar A 1960 Experimental investigation of conduction band of GaSb Phys. Rev. 117 93-100
    • (1960) Phys. Rev. , vol.117 , pp. 93-100
    • Sagar, A.1
  • 51
    • 3242681526 scopus 로고
    • Electrical properties of n-type GaSb
    • Strauss A J 1961 Electrical properties of n-type GaSb Phys. Rev. 121 1087-90
    • (1961) Phys. Rev. , vol.121 , pp. 1087-1090
    • Strauss, A.J.1
  • 52
    • 0009712848 scopus 로고
    • Electron mobility in GaSb at 77 K
    • Baxter R D, Reid F J and Reer A C 1967 Electron mobility in GaSb at 77 K Phys. Rev. 162 718-27
    • (1967) Phys. Rev. , vol.162 , pp. 718-727
    • Baxter, R.D.1    Reid, F.J.2    Reer, A.C.3
  • 54
    • 0542443555 scopus 로고
    • Hole transport properties in GaSb from 77 to 300 K
    • Mathur P C and Jain S 1979 Hole transport properties in GaSb from 77 to 300 K Phys. Rev. B 19 3152-60
    • (1979) Phys. Rev. B , vol.19 , pp. 3152-3160
    • Mathur, P.C.1    Jain, S.2
  • 56
    • 0001170869 scopus 로고    scopus 로고
    • Carrier compensation and scattering mechanisms in p-GaSb
    • Dutta P S, Prasad V, Bhat H L and Kumar V 1996 Carrier compensation and scattering mechanisms in p-GaSb J. Appl. Phys. 80 2847-53
    • (1996) J. Appl. Phys. , vol.80 , pp. 2847-2853
    • Dutta, P.S.1    Prasad, V.2    Bhat, H.L.3    Kumar, V.4
  • 57
    • 4043081405 scopus 로고
    • Numerical data and funcional relationships in science and technology
    • Berlin: Springer
    • Landolt-Börnstein (ed) 1985 Numerical data and funcional relationships in science and technology III-V Semiconductors vol 17a (Berlin: Springer)
    • (1985) III-V Semiconductors , vol.17 A
    • Landolt-Börnstein1
  • 58
    • 0030686758 scopus 로고    scopus 로고
    • Photoluminiscence and electrical properties of MOVPE-grown Zn-doped GaSb on GaAs
    • Hjelt K and Tuomi T 1997 Photoluminiscence and electrical properties of MOVPE-grown Zn-doped GaSb on GaAs J. Cryst. Growth 170 794-8
    • (1997) J. Cryst. Growth , vol.170 , pp. 794-798
    • Hjelt, K.1    Tuomi, T.2
  • 61
    • 0003062914 scopus 로고
    • Hole transport in gallium antimonide
    • Heller M W and Hamerly R G 1985 Hole transport in gallium antimonide J. Appl. Phys. 57 4626-32
    • (1985) J. Appl. Phys. , vol.57 , pp. 4626-4632
    • Heller, M.W.1    Hamerly, R.G.2
  • 62
    • 0019578094 scopus 로고
    • Electrical and optical studies in gallium antimonide
    • Nakashima k 1981 Electrical and optical studies in gallium antimonide Japan. J. Appl. Phys. 20 1085
    • (1981) Japan. J. Appl. Phys. , vol.20 , pp. 1085
    • Nakashima, K.1
  • 63
    • 77957045562 scopus 로고
    • ed R K Willardson and A C Beer (New York: Academic)
    • Wiley J D 1975 Semiconductors and Semimetals vol 10, ed R K Willardson and A C Beer (New York: Academic) p 91
    • (1975) Semiconductors and Semimetals , vol.10 , pp. 91
    • Wiley, J.D.1
  • 64
    • 0016917534 scopus 로고
    • Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
    • Casey H C and Stern F 1976 Concentration-dependent absorption and spontaneous emission of heavily doped GaAs J. Appl. Phys. 47 631-43
    • (1976) J. Appl. Phys. , vol.47 , pp. 631-643
    • Casey, H.C.1    Stern, F.2
  • 65
    • 0016424753 scopus 로고
    • Concentration dependence of the absorption coefficient for n and p type GaAs between 1.3 and 1.6 eV J
    • Casey H C, Seel D D and Wecht K W 1975 Concentration dependence of the absorption coefficient for n and p type GaAs between 1.3 and 1.6 eV J. Appl. Phys. 46 250-7
    • (1975) Appl. Phys. , vol.46 , pp. 250-257
    • Casey, H.C.1    Seel, D.D.2    Wecht, K.W.3
  • 67
    • 4043112866 scopus 로고    scopus 로고
    • Investigation of temperature effects in GaSb-based (thermo-) photovoltaic cells based on infrared spectral response measurements
    • Beckert R and Bucher K 1997 Investigation of temperature effects in GaSb-based (thermo-) photovoltaic cells based on infrared spectral response measurements Proc. 14th Europ. Photov. Solar Energy Conf. (Barcelona, Spain) pp 1740-3
    • (1997) Proc. 14th Europ. Photov. Solar Energy Conf. (Barcelona, Spain) , pp. 1740-1743
    • Beckert, R.1    Bucher, K.2
  • 69
    • 4043173544 scopus 로고    scopus 로고
    • GaSb Thermophotovoltaic converters manufactured by single Zn diffusion using spin-on masking layers
    • Martin D and Algora C 2001 GaSb Thermophotovoltaic converters manufactured by single Zn diffusion using spin-on masking layers Proc. 17th Europ. Photov. Solar Energy Conf. (Munich, Germany) pp 152-5
    • (2001) Proc. 17th Europ. Photov. Solar Energy Conf. (Munich, Germany) , pp. 152-155
    • Martin, D.1    Algora, C.2
  • 70
    • 0030120871 scopus 로고    scopus 로고
    • TPV cell IV curve testing with varying black body emission temperatures, intensities, and cell temperatures
    • Lin J J and Burger D R 1996 TPV cell IV curve testing with varying black body emission temperatures, intensities, and cell temperatures Sol. Energy Mater. Sol. Cells 40 177-81
    • (1996) Sol. Energy Mater. Sol. Cells , vol.40 , pp. 177-181
    • Lin, J.J.1    Burger, D.R.2
  • 71
    • 0029408954 scopus 로고
    • Theoretical study of GaSb PV cell efficiency as a function of temperature
    • Ferguson L G and Fraas L M 1995 Theoretical study of GaSb PV cell efficiency as a function of temperature Sol. Energy Mater. Sol. Cells 39 11-8
    • (1995) Sol. Energy Mater. Sol. Cells , vol.39 , pp. 11-18
    • Ferguson, L.G.1    Fraas, L.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.