High purity GaSb grown by LPE in a sapphire boat

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 27-32

  Olvera Hernandez J ^a   de Anda, F ^a   Navarro Contreras, H ^a   Mishurnyi, V A ^a  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH;

GALLIUM ANTIMONIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3042683533     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00513-8     Document Type: Article

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