Optimized FIB silicon samples suitable for lattice parameters measurements by convergent beam electron diffraction

Micron

Volumn 39, Issue 3, 2008, Pages 294-301

  Alexandre, L ^a   Rousseau, K ^a   Alfonso, C ^a   Saikaly, W ^a   Fares, L ^b   Grosjean, C ^b   Charai A ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Amorphized layer thickness; Convergent beam electron diffraction; Damaged layer; Electron energy loss spectroscopy; Focused ion beam; Specimen thickness measurement; Strain measurement

Indexed keywords

ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; FOCUSED ION BEAMS; LATTICE CONSTANTS; OPTIMIZATION; STRAIN MEASUREMENT; THICKNESS MEASUREMENT;

AMORPHIZED LAYER THICKNESS; CONVERGENT BEAM ELECTRON DIFFRACTION;

SILICON;

EID: 39749191890     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2007.01.005     Document Type: Article

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