Observations of crystal damage on the sidewalls of TEM samples prepared by FIB milling

Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004

Volumn , Issue , 2004, Pages 563-565

  Gao, Qiang ^a   Zhang, Mark ^a   Niou, Chorng ^a   Li, Ming ^a   Chien, W T Kary ^a  

^a Semiconduct Mfg Intl Company   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; ELECTRIC POTENTIAL; FOCUSING; INTEGRATED CIRCUITS; ION BEAMS; MILLING (MACHINING); MONTE CARLO METHODS; PHASE TRANSITIONS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL DAMAGE; PENETRATION DEPTHS; TILT ANGLE; TRANSMISSION ELECTRON MICROSCOPES (TEM);

ELECTRON MICROSCOPES;

EID: 10444275771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. Leslie A.J., K.L. Pey, K.S. Sim, M.T.F. Ben and G.P. Goh, TEM sample preparation using FIB: practical problems and artifacts, Proc. ISTFA'95, p353-362.
3. T.Ishitani, H.Koike, T.Yaguchi, and T.Kamino, Implanted gallium-ion concentrations of focused-ion-beam prepared cross sections, J. Vac. Sci. Technol., B16, 1907(1998).
4. N. I. Kato, Y. Kohno, and H. Saka, Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching, J. Vac. Sci. Technol., A 17(4), 1999, p1201-1204.
5. R.M.Langford, A.L.Petford-Long, preparation of TEM cross-section specimens using FIB milling, J. Vac. Sci. Technol., A19(5), 2001, p2186-2193.
6. R.J.Young, P.D. Carleson, X. Da, T. Hunt and J.F. Walker, High-yield and high-throughput TEM sample preparation using focused ion beam automation, Proc. ISTFA'98, p329-3