Unified compact model for generic double-gate MOSFETs

2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings

Volumn 3, Issue , 2007, Pages 538-543

  Zhou, Xing ^a   See, Guan Huei ^a   Zhu, Guojun ^a   Chandrasekaran, Karthik ^a,b   Zhu, Zhaomin ^a   Rustagi, Subhash ^c   Lin, Shihuan ^a   Wei, Chengqing ^a   Lim, Guan Hui ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b ADVANCED MICRO DEVICES   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Compact model; FinFET; MOSFET; Partially fully depleted SOI; Symmetric asymmetric double gate; Ultra thin body; Unified regional surface potential

Indexed keywords

CHANNEL CAPACITY; GATE DIELECTRICS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SURFACE POTENTIAL; SURFACE STRUCTURE;

COMPACT MODELS; DOUBLE-GATE (DG); OXIDE THICKNESS; ULTRA-THIN BODY; UNIFIED REGIONAL SURFACE POTENTIAL;

SEMICONDUCTOR DEVICE MODELS;

EID: 34547969116     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. X. Zhou, K. Chandrasekaran, G. H. See, Z. M. Zhu, G. H. Lim, S. H. Lin, C. Q. Wei, S. B. Chiah, M. Cheng, S. Chu, L.C. Hsia, and S. Rustagi, "Towards unification of MOS compact models with the unified regional approach," in Proc. ICSICT 2006, Shanghai, China, Oct. 2006, pp. 1193-1197.
2. C. T. Sah, "A history of MOS transistor compact modeling," in Proc. NSTI Nanotech 2005, Anaheim, May 2005, vol. WCM, pp. 347-390.
3. R. H. Kingston and S. F. Neustadter, "Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor," J. Appl. Phys., vol. 26, no. 6, pp. 718-720, June 1955.
4. X. Zhou, K. Chandrasekaran, S. B. Chiah, W. Z. Shangguan, Z. M. Zhu, G. H. See, S. M. Pandey, G. H. Lim, S. Rustagi, M. Cheng, S. Chu, and L.-C. Hsia, "Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling," in Proc. NSTI Nanotech 2006, Boston, May 2006, vol. 2, pp. 652-657.