Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

IEEE Electron Device Letters

Volumn 29, Issue 2, 2008, Pages 161-164

  Zang, H ^a   Lee, S J ^b   Loh, W Y ^a   Wang, J ^a   Chua, K T ^a   Yu, Ming Bin ^a   Cho, B J ^b   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Dark current; Dopant segregation (DS); Germanium; Optical communications; Photodetectors; Selective epitaxial

Indexed keywords

BANDWIDTH; DARK CURRENTS; DOPING (ADDITIVES); OPTICAL COMMUNICATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

DOPANT-SEGREGATION; METAL-GERMANIUM-METAL PHOTODETECTOR; PHOTORESPONSIVITY;

PHOTODETECTORS;

EID: 39549113172     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.914095     Document Type: Article

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