Leakage suppression by asymmetric area electrodes in metal-semiconductor- metal photodetectors

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Okyay, Ali K ^a   Chui, Chi On ^a,b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL PHOTODETECTORS; NORMALIZED PHOTO-TO-DARK CURRENT RATIO (NPDR);

DETECTORS; PHOTODETECTORS; SEMICONDUCTOR MATERIALS;

ELECTRODES;

EID: 32444431617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171648     Document Type: Review

References (5)

1. D. A. B. Miller, IEEE J. Sel. Top. Quantum Electron. 6, 1312 (2000).
2. J. B. D. Soole and H. Schumacher, IEEE J. Quantum Electron. 27, 737 (1991).
3. H. S. Fresser, F. E. Prins, and D. P. Kern, J. Vac. Sci. Technol. B 13, 2553 (1995).
4. W. A. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, and I. Adesida, Appl. Phys. Lett. 69, 3578 (1996).
5. C. O. Chui, A. K. Okyay, and K. C. Saraswat, IEEE Photonics Technol. Lett. 15, 1585 (2003).