Decoupling of cold carrier effects in hot carrier reliability of HfO 2 gated nMOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 200-203

  Park, Hokyung ^a,d   Choi, Rino ^b   Song, Seung Chul ^b   Chang, Man ^a   Young, Chadwin D ^b   Bersuker, Gennadi ^b   Lee, Byoung Hun ^c   Lee, Jack C ^d   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SEMATECH   (United States)

^c IBM   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER EFFECTS; COLD CARRIER INJECTION;

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; GATES (TRANSISTOR); RELIABILITY THEORY;

MOSFET DEVICES;

EID: 34250697924     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251217     Document Type: Conference Paper

References (8)

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