Design and performance of InAlGaAs/InAlAs superlattice avalanche photodiodes

Journal of Lightwave Technology

Volumn 15, Issue 6, 1997, Pages 1012-1018

  Watanabe, Isao ^a   Tsuji, Masayoshi ^a   Hayashi, Masako ^a   Makita, Kikuo ^a   Taguchi, Kenko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Avalanche photodiode; Dark current; Gain bandwidth product; Lifetime; Mesa structure; Superlattice

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; ELECTRIC CURRENTS; ELECTRIC FIELDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; SERVICE LIFE; THERMAL EFFECTS;

AVALANCHE PHOTODIODES; DARK CURRENTS; GAIN BANDWIDTH PRODUCT;

PHOTODIODES;

EID: 0031168455     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.588675     Document Type: Article

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