Activation and deactivation studies of laser thermal annealed boron, arsenic, phosphorus, and antimony ultra-shallow abrupt junctions

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 155-158

  Murto, Robert ^a   Jones, Kevin ^b   Rendon, Michael ^c   Talwa, Somit ^d  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c MOTOROLA INC   (United States)

^d Verdant Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE GEOMETRIES; FOUR-POINT PROBE; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; JUNCTION DEPTH; LASER ENERGIES; LASER THERMAL; LASER THERMAL ANNEALING; MELT DEPTH; N-TYPE DOPANTS; PRE-AMORPHIZED SILICON; ROADMAP; SHALLOW EXTENSION; THERMAL BUDGET;

ANNEALING; ANTIMONY; ARSENIC; BORON; BORON COMPOUNDS; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; ION IMPLANTATION; LASER HEATING; PHOSPHORUS; RAPID THERMAL PROCESSING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR LASERS; THERMOANALYSIS;

SEMICONDUCTOR JUNCTIONS;

EID: 78649816959     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924113     Document Type: Conference Paper

References (7)

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: I999 Edition, Austin, Tx: International SEMATECH, 1999.
2. S. Talwar, G. Verma, and K. Weiner, "Ultra-shallow, abrupt, and highly-activated junctions by low-energy ion implantation and laser annealing," 1998 International Conference on Ion Implantation Technology Proceedings, 1999, pp. 1171-1 174.
3. B. Yu, Y. Wang, H. Wang, Q. xiang, C. Riccobene, S. Talwar and M. Lin, "70nm MOSFET with ultra-shallow, abrupt, and super-doped S/D extension implemented by laser thermal process (LTP)", 1999 lnternational Electron Devices Meeting: Technical Digest, 1999, pp. 509-512.
4. K. Goto, T. Yamamoto, T. Kubo, M. Kase, Y. Wang, T. Lin, S. Talear and T. Sugii, "Ultra-low contact resistance for deca-nm MOSFETs by laser annealing", 1999 International Electron Devices Meeting: Technical Digest, 1999, pp. 931-933.
5. M. Thompson, G. Galvin, J. Mayer, P. Peercy, J. Poate, D. Jacobson, A. Cullis and N. Chew, "Melting temperature and explosive crystallization of amorphow silicon during pulsed laser irradiation," Physical Review Letters, vol. 52, 1984, pp. 2360-2363.
6. P. Peercy and M. Thompson, "Kinetic and thermodynamic studies of pulsed laser irradiation," SPlE Vol. 668 Laser Processing Fundamentals, Applications and Systems Engineering, 1986, pp. 72-81. (Pubitemid 17559488)
7. J. Poate, "High speed crystal growth and solidification using laser heating," Journal of Crystal Growth, vol. 79, 1986, pp. 549-561.