A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT

IEEE Electron Device Letters

Volumn 23, Issue 3, 2002, Pages 133-135

  Lin, Ching Wei ^b   Tseng, Chang Ho ^b   Chang, Ting Kuo ^b   Lin, Chiung Wei ^c   Wang, Wen Tung ^c   Cheng, Huang Chung ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Excimer laser; Poly Si thin film transistor; Self aligned gate overlapped LDD

Indexed keywords

LIGHTLY DOPED DRAIN (LDD) STRUCTURES;

EXCIMER LASERS; GATES (TRANSISTOR); LASER BEAM EFFECTS; LEAKAGE CURRENTS; LOW TEMPERATURE PHENOMENA; POLYSILICON; QUARTZ; SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 0036503239     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.988815     Document Type: Article

References (14)

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4. Characteristics of offset-structure polycrystalline-silicon thin-film transistors
5. Gate-overlapped lightly doped drain poly-Si thin-film transistors for large area-AMLCD
6. A novel self-aligned gate-over-lapped LDD poly-Si TFT with high reliability and performance
7. A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure
8. An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication
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10. Use of neck-down areas to control nucleation site and direction of solidification of polycrystalline silicon using excimer laser crystallization
11. Numerical analysis of the electrical characteristics of gate overlapped lightly doped drain polysilicon thin film transistors
12. Excimer laser crystallization of poly-Si TFTs for AMLCDs
13. Investigation of the relationship between hot-carrier degradation and kink effect in low-temperature poly-Si TFTs
14. Analysis of drain field and hot carrier stability of poly-Si thin film transistors