Investigation of the undershoot effect in polycrystalline silicon thin film transistors

Solid-State Electronics

Volumn 52, Issue 3, 2008, Pages 394-399

  Michalas, L ^a   Papaioannou, G J ^a   Kouvatsos, D N ^b   Voutsas, A T ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

^c SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Polysilicon TFTs; Transient currents; Undershoot effect

Indexed keywords

ELECTRIC CURRENT CONTROL; GATES (TRANSISTOR); POLYSILICON; THERMAL EFFECTS; TRANSIENTS;

TRANSIENT CURRENTS; UNDERSHOOT EFFECTS;

THIN FILM TRANSISTORS;

EID: 39049164756     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.018     Document Type: Article

References (15)

1. Choi K.Y., Lee J.W., and Han M.K. Gate-overlapped lightly doped drain poly-Si thin film transistors for large area-AMLCD. IEEE Trans Electron Dev 45 (1998) 1272-1279
2. Bavidge N., Boero M., Migliorato P., and Shimoda T. Switch-on transient behaviour in low-temperature polycrystalline silicon thin-film transistors. Appl Phys Lett 77 (2000) 3836-3838
3. Yan F., Migliorato P., and Ishihara R. Influence of trap states on dynamic properties of single grain silicon thin film transistors. Appl Phys Lett 88 (2006) 53507
4. Papaioannou G.J., Exarchos M., Kouvatsos D.N., and Voutsas A.T. Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors. Appl Phys Lett 87 (2005) 252112
5. Exarchos M., Papaioannou G.J., Kouvatsos D.N., and Voutsas A.T. Drain current overshoot transient in polycrystalline silicon transistors: the effect of hole generation mechanism. J Appl Phys 99 (2006) 024511
6. Yan F., Migliorato P., Hong Y., Rana V., Ishihara R., Hiroshima Y., et al. Gate oxide induced switch-on undershoot current observed in thin-film transistors. Appl Phys Lett 86 (2005) 253504
7. 2. Appl Phys Lett 69 (1996) 2864
8. Voutsas A. Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility. IEEE Trans Electron Dev 50 (2003) 1494-1500
9. Crowder M.A., Moriguchi M., Mitani Y., and Voutsas A.T. Parametric investigation of SLS-processed poly-silicon thin films for TFT applications. Thin Solid Films 427 (2003) 101-107
10. Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT. The role of grain boundaries on the performance of poly-Si TFTs. In: Proceeding of 210th electrochem. society meeting, vol. 8; 2006. p. 87-92.
11. Munteanu D., Weiser D.A., Cristoloveanu S., Faynot O., Pelloie J.L., and Fossum J.G. Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations. IEEE Trans Electron Dev 45 (1998) 1678-1683
12. Schroder D.K. Semiconductor material and device characterization (1998), J. Wiley & Sons
13. Chen Y.F., and Huang S.F. Connection between the Meyer-Neldel rule and stretched exponential relaxation. Phys Rev B 44 (1991) 13775
14. Sturman B., Podivilon E., and Gorkunov M. Origin of stretched exponential relaxation for hopping-transport models. Phys Rev Lett 91 (2003) 176602
15. Michalas L., Exarchos M.A., Papaioannou G.J., Kouvatsos D.N., and Voutsas A.T. An experimental study of the thermally activated processes in polycrystalline silicon thin film transistors. Microelectron Reliab 47 (2007) 2058-2064