Influence of trap states on dynamic properties of single grain silicon thin film transistors

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Yan, F ^a   Migliorato, P ^a   Ishihara, R ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRAPS; SILICON; SINGLE CRYSTALS;

OVERSHOOT CURRENT; SINGLE GRAIN SILICON; TRAP STATES;

THIN FILM TRANSISTORS;

EID: 33646126277     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193049     Document Type: Article

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