Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Papaioannou, G J ^a   Exarchos, M ^a   Kouvatsos, D N ^b   Voutsas, A T ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

^c SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE BIAS CONDITIONS; FILM PROPERTIES; RELAXATION MODELS; TRANSIENT DECAY;

ACTIVATION ENERGY; MATHEMATICAL MODELS; POLYSILICON; THERMAL EFFECTS; TRANSIENTS;

THIN FILM TRANSISTORS;

EID: 29144535694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2138806     Document Type: Article

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