Structural investigation of growth and dissolution of Inx Ga1 - x N nano-islands grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 4, 2008, Pages 748-756

  Pretorius, A ^a   Yamaguchi, T ^b   Kubel C ^c   Kroger R ^a   Hommel, D ^a   Rosenauer, A ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

Author keywords

A1. High resolution transmission electron microscopy; A3. Molecular beam epitaxy; A3. Nanostructures; B2. Semiconducting indium gallium nitride

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES;

SEMICONDUCTING INDIUM GALLIUM NITRIDE; WURTZITE MODIFICATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 39049156808     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.203     Document Type: Article

References (34)

1. Nakamura S., Senoh M., and Mukai T. Jpn. J. Appl. Phys. 32 Part 2, 1A/B (1993) L8
2. Nakamura S., Senoh M., Nagahama S.-I., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., and Kiyoku H. Appl. Phys. Lett. 69 (1996) 4056
3. Nakamura S., Pearton S., and Fasol G. The Blue Laser Diode-The Complete Story (2000), Springer, Berlin
4. Keller S., Keller B.P., Minsky M.S., Bowers J.E., Mishra U.K., DenBaars S.P., and Seifert W. J. Crystal Growth 189/190 (1998) 29
5. Zhang J., Hao M., Li P., and Chua S.J. Appl. Phys. Lett. 80 (2002) 485
6. Han X., Li J., Wu J., Wang X., Li D., Liu X., Han P., Zhu Q., and Wang Z. Vacuum 77 (2005) 307
7. Oliver R.A., Kappers M.J., Rice J.H., Smith J.D., Taylor R.A., Humphreys C.J., and Briggs G.A.D. Phys. Status Solidi (C) (2003) 2515
8. Rice J.H., Oliver R.A., Robinson J.W., Smith J.D., Taylor R.A., Briggs G.A.D., Kappers M.J., Humphreys C.J., and Yasin S. Physica E 21 (2004) 546
9. Stranski I.N., and Krastanow L. Akad. Wiss. Wien Kl. IIb 146 (1938) 797
10. Zywietz T., Neugebauer J., and Scheffler M. Appl. Phys. Lett. 73 (1998) 487
11. Dai X.-Q., Wu H.-S., Xie M.-H., Xu S.-H., and Tong S.-Y. Chinese Phys. Lett. 21 (2004) 527
12. Smeeton T.M., Kappers M.J., Barnard J.S., Vickers M.E., and Humphreys C.J. Phys. Status Solidi (B) 240 (2003) 297
13. Smeeton T.M., Kappers M.J., Barnard J.S., Vickers M.E., and Humphreys C.J. Appl. Phys. Lett. 83 (2003) 5419
14. Li T., Hahn E., Gerthsen D., Rosenauer A., Strittmatter A., Reißmann L., and Bimberg D. Appl. Phys. Lett. 86 (2005) 241911
15. Rosenauer A., Remmele T., Gerthsen D., Tillmann K., and Förster A. Optik 105 (1997) 99
16. Vegard L. Z. Phys. 5 (1921) 17
17. Wright A.F. J. Appl. Phys. 82 (1997) 2833
18. Maruska H.P., and Tietjen J.J. Appl. Phys. Lett. 15 (1969) 327
19. Paszkowicz W., Adamczyk J., Krukowski S., Leszczyński M., Porowski S., Sokołowski J.A., Michalec M., and Łasocha W. Philos. Mag. A 79 (1999) 1145
20. Rosenauer A., Gerthsen D., and Potin V. Phys. Status Solidi (A) 203 (2006) 176
21. Friedel M.G. C.R. Acad. Sci. Paris 157 (1913) 1533
22. Mader W., and Rečnik A. Phys. Status Solidi (A) 166 (1998) 381
23. Stadelmann P.A. Ultramicroscopy 21 (1987) 131
24. Wu X.H., Fini P., Tarsa E.J., Heying B., Keller S., Mishra U.K., DenBaars S.P., and Speck J.S. J. Crystal Growth 189/190 (1998) 231
25. Ho I.-H., and Stringfellow G.B. Appl. Phys. Lett. 69 (1996) 2701
26. Karpov S.Y. MRS Int. J. Nitride Semicond. Res. 3 (1998) 16
27. Ng Y.F., Cao Y.G., Xie M.H., Wang X.L., and Tong S.Y. Appl. Phys. Lett. 81 (2002) 3960
28. Matthews J.W., and Blakeslee A.E. J. Crystal Growth 27 (1974) 118
29. Matthews J.W., and Blakeslee A.E. J. Crystal Growth 29 (1975) 273
30. Matthews J.W. J. Vac. Sci. Technol. 12 (1975) 126
31. Shimizu M., Kawaguchi Y., Hiramatsu K., and Sawaki N. Solid-State Electron. 41 (1997) 145
32. Tersoff J. Phys. Rev. Lett. 81 (1998) 3183
33. Tersoff J., and LeGoues F.K. Phys. Rev. Lett. 72 (1994) 3570
34. Hesse A., Stangl J., Holý V., Bauer G., Kirfel O., Müller E., and Grützmacher D. Mater. Sci. Eng. B 101 (2003) 71