Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2515-2519

  Oliver, R A ^a   Kappers, M J ^b   Rice, J H ^a   Smith, J D ^a   Taylor, R A ^a   Humphreys, C J ^b   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INGAN EPILAYERS; INGAN QUANTUM DOTS; LUMINESCENCE SPECTRUM; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOLECULAR NITROGEN; SPATIALLY RESOLVED;

EPILAYERS; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; NITROGEN; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM NITRIDE;

EID: 34547140264     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303264     Document Type: Conference Paper

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