Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 286-292

  Vervisch, V ^a,b   Etienne, H ^a   Torregrosa, F ^a   Roux, L ^a   Ottaviani, L ^b   Pasquinelli, M ^b   Sarnet, T ^c   Delaporte, P ^c  

^a Ion Beam Services   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EXCIMER LASERS; ION IMPLANTATION; PLASMAS; RAPID THERMAL ANNEALING; SILICON WAFERS;

BEAMLINE IMPLANTATION; DRAIN EXTENSION; PLASMA IMMERSION ION IMPLANTATION (PIII); PREAMORPHIZATION;

SEMICONDUCTOR JUNCTIONS;

EID: 38849198713     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2834555     Document Type: Article

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