Characterization of ultrashallow junctions using frequency-dependent junction photovoltage and its lateral attenuation

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Faifer, V N ^a   Current, M I ^a   Schroder, D K ^b  

^a Frontier Semiconductor   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY DEPENDENT JUNCTION; PHOTOVOLTAGES; ULTRASHALLOW JUNCTIONS;

ATTENUATION; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; LIGHTING;

SEMICONDUCTOR JUNCTIONS;

EID: 33749999241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2362596     Document Type: Article

References (10)

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