The fabrication of advanced transistors with plasma doping

Surface and Coatings Technology

Volumn 156, Issue 1-3, 2002, Pages 262-266

  Lenoble, D ^a   Grouillet, A ^b  

^a STMICROELECTRONICS   (France)

^b ORANGE LABS   (France)

Author keywords

0.1 m pMOS transistors; Ion implantation; Plasma doping; Ultra shallow junction

Indexed keywords

CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; MOSFET DEVICES; PLASMAS; SEMICONDUCTING SILICON; TRANSISTORS;

PLASMA DOPING (PLAD); ULTRA SHALLOW JUNCTIONS (USJ);

SEMICONDUCTOR DOPING;

PLASMA TREATMENT;

EID: 0036642326     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00105-6     Document Type: Article

References (7)