Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2117-2120

  Collazo, R ^a   Mita, S ^a   Schiesser, R ^a   Sitar, Z ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SAPPHIRE; THIN FILMS;

DILUTION GAS; GROWTH RATES; SUBSTRATE PRE-TREATMENTS;

GALLIUM NITRIDE;

EID: 27344451098     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461546     Document Type: Conference Paper

References (5)

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