Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 μm

Electronics Letters

Volumn 39, Issue 1, 2003, Pages 57-58

  Lauer, C ^a   Ortsiefer, M ^b   Shau, R ^a   Rosskopf, J ^b   Bohm G ^a   Maute, M ^a   Kohler F ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b VERTILAS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; LIGHT ABSORPTION; PROCESS CONTROL; SILICON WAFERS; STRAIN;

VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

CONTINUOUS WAVE LASERS;

EID: 0037426923     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030057     Document Type: Article

References (5)

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2. CERUTTI, L., GARNACHE, A., GENTY, F., ALIBERT, C., ROMANINI, D., and PICARD, E.: 'Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the λ=24.5 μm range'. Proc. 14th Indium Phosphide and Related Materials Conf., Stockholm, Sweden, 2002 pp. 739-742
3. BEWELY, W.W., FELIX, C.L., VURGAFTMAN, I., AIFER, E.H., MEYER, J.R., GOLDBERG, L., LINDLE, J.R., CHOW, D.H., and SELVIG, E.: 'Continuous-wave mid-infrared VCSELs', IEEE Photonics Technol. Lett., 2000, 10, (5), pp. 660-662
4. ORTSIEFER, M., SHAU, R., BÖHM, G., ZIGLDRUM, M., ROSSKOPF, J., KÖHLER, F., and AMANN, M.-C.: '90°C continuous-wave operation of 1.83-μm vertical-cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 2000, 12, (11), pp. 1435-1437
5. SHAU, R., ORTSIEFER, M., ROSSKOPF, J., BÖHM, G., KÖHLER, F., and AMANN, M.-C.: 'Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature', Electron. Lett., 2001, 37, pp. 1295-1296