Effect of geometry upon the performance of a thin film ferroelectric capacitor

International Journal of Solids and Structures

Volumn 45, Issue 7-8, 2008, Pages 2024-2041

  Pane, I ^a   Fleck, N A ^b   Huber, J E ^c   Chu, D P ^b,d  

^a BANDUNG INSTITUTE OF TECHNOLOGY   (Indonesia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d Cambridge Research Laboratory of Epson   (United Kingdom)

Author keywords

Ferroelectric; Film; Memory; PZT; Substrate

Indexed keywords

CAPACITORS; ETCHING; FINITE ELEMENT METHOD; RANDOM ACCESS STORAGE; THIN FILMS; TWO DIMENSIONAL;

EDGE INCLINATION ANGLE; FERROELECTRIC CAPACITOR;

FERROELECTRIC DEVICES;

EID: 38749144736     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2007.11.017     Document Type: Article

References (34)

1. Abaqus 6.5, ABAQUS, Inc., Rhode Island, USA.
2. Alexe M., Harnagea C., Hesse D., and Gosele U. Polarization imprint and size effects in mesoscopic ferroelectric structures. Appl. Phys. Lett. 79 (2001) 242-244
3. Alexe M., Harnagea C., Erfurth W., Hesse D., and Gosele U. 100 nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing. Appl. Phys. A 70 (2000) 247-251
4. Alik H., and Hughes T.J.R. Finite element method for piezoelectric vibration. Int. J. Numer. Methods Eng. 2 (1970) 151-157
5. Chu, D.P., 2004. Ferroelectric random access memory (FeRAMS) cells and non-destructive read-out (NDRO). In: Proceedings of 3rd ECS International Semiconductor Technology Conference (ISTC), 94-99.
6. Dawber M., Rabe K.M., and Scott J.F. Physics of thin-film ferroelectric oxides. Rev. Mod. Phys. 77 (2005) 1083-1130
7. Gong X., and Suo Z. Reliability of ceramic multilayer actuators: a nonlinear finite element simulation. J. Mech. Phys. Solids 44 5 (1996) 751-769
8. Haug A., Huber J.E., Onck P.R., and Van der Giessen E. Multi-grain analysis versus self-consistent estimates of ferroelectric polycrystals. J. Mech. Phys. Solids 55 3 (2007) 648-665
9. Huber J.E., Fleck N.A., Landis C.M., and McMeeking R.M. A constitutive model for ferroelectric polycrystals. J. Mech. Phys. Solids 47 8 (1999) 1663-1697
10. Huber J.E., and Fleck N.A. Multi-axial electrical switching of a ferroelectric: theory versus experiment. J. Mech. Phys. Solids 49 4 (2001) 785-811
11. Huber J.E., and Fleck N.A. Ferroelectric switching: a micromechanics model versus measured behavior. Eur. J. Mech. A 23 (2004) 203-217
12. Jaffe B., Roth R.S., and Marzullo S. J. Appl. Phys. 25 (1954) 809
13. Jaffe B., Cook Jr. W.R., and Jaffe H. Piezoelectric Ceramics (1971), Academic Press, London
14. Jung D.J., Morrison F.D., Dawber M., Kim H.H., Kim K., and Scott J.F. Effect of microgeometry on switching and transport in lead zirconate titanate capacitors: implications for etching of nano-ferroelectrics. J. Appl. Phys. 95 9 (2004) 4968-4975
15. Kessler H., and Balke H. On the local and average energy release in polarization switching phenomena. J. Mech. Phys. Solids 49 5 (2001) 953-978
16. 2/Si substrates. J. Vac. Sci. Tech. A 22 4 (2004) 1315-1318
17. Li Y.L., Hu S.Y., Liu Z.K., and Chen L.Q. Phase-field model of domain structures in ferroelectric thin films. Appl. Phys. Lett. 78 24 (2001) 3878-3880
18. Li Y.L., Hu S.Y., Liu Z.K., and Chen L.Q. Effect of substrate constraint on the stability and evolution of ferroelectric domain structures in thin films. Acta Mater. 50 2 (2002) 395-411
19. Loge R.E., and Suo Z. Nonequilibrium thermodynamics of ferroelectric domain evolution. Acta Mater. 44 (1996) 3429-3438
20. Matlab 7.7, The MathWorks, Massachusetts, USA.
21. Miller S.L., Nasby R.D., Schwank J.R., Rodgers M.S., and Dressendorfer P.V. Device modeling of ferroelectric capacitors. J. Appl. Phys. 68 12 (1990) 6463-6471
22. Needleman A., Asaro R.J., Lemonds J., and Peirce D. Finite element analysis of crystalline solids. Comput. Methods Appl. Mech. Eng. 52 1-3 (1985) 689-708
23. 3 thin films. Phys. Rev. Lett. 94 (2005) 197601
24. Peirce D., Asaro R.J., and Needleman A. Material rate dependence and localized deformation in crystalline solids. Acta Mater. 31 12 (1983) 1951-1976
25. Pintilie L., Gomes M.J.M., Zhao T., Ramesh R., and Alexe M. Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties. J. Appl. Phys. 98 (2005) 1241031-1241038
26. Pintilie L., and Alexe M. Metal-ferroelectric-metal heterostructures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films. J. Appl. Phys. 98 (2005) 1241041-1241049
27. Scott J.F., Morrison F.D., Miyake M., Zubko P., Lou X.J., Kugler V.M., Rios S., Zhang M., Tatsuta T., Tsuji O., and Leedham T.J. Recent materials characterizations of 2D and 3D thin film ferroelectric structures. J. Am. Ceram. Soc. 88 7 (2005) 1691-1701
28. Shirane G., and Hoshino S. J. Phys. Soc. Jpn. 6 (1951) 265
29. 3 thin films deposited from multielement metal targets. J. Appl. Phys. 64 3 (1988) 1484-1493
30. 3 thin films prepared by a simple sol-gel route. Microelectron. Eng. 65 4 (2003) 387-393
31. 3 thin films. Phys. Rev. Lett. 89 9 (2002) 097601
32. Xu X.L., and Rajapakse R.K.N.D. On singularities in composite piezoelectric wedges and junctions. Int. J. Solids Struct. 37 23 (2000) 3253-3275
33. 3 thin films by sol gel processing: electrical, optical, and electro-optic properties. J. Appl. Phys. 64 5 (1988) 2717-2724
34. Zhang W., and Bhattacharya K. A computational model of ferroelectric domains. Part II: grain boundaries and defect pinning. Acta Mater. 53 1 (2005) 199-209