100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 3, 2000, Pages 247-251

  Alexe, M ^a   Harnagea, C ^a   Erfurth, W ^a   Hesse, D ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; ELECTRONIC EQUIPMENT MANUFACTURE; FERROELECTRIC DEVICES; HYSTERESIS; PIEZOELECTRICITY; POLARIZATION; THIN FILMS;

ELECTRON BEAM DIRECT WRITING; FERROELECTRIC MEMORY CELLS; PIEZOELECTRIC HYSTERESIS LOOPS; PIEZORESPONSE MODE; SCANNING FORCE MICROSCOPE;

NONVOLATILE STORAGE;

EID: 0034156390     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050043     Document Type: Article

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