Ferroelectric Random access memory (FeRAMS) cells and Non-Destructive Read-Out (NDRO)

Proceedings - Electrochemical Society

Volumn 11, Issue , 2004, Pages 94-100

  Chu, D P ^a,b  

^a Cambridge Research Laboratory of Epson   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; NONDESTRUCTIVE EXAMINATION; READOUT SYSTEMS;

MEMORY CELLS; NON-DESTRUCTIVE READ-OUT (NDRO);

RANDOM ACCESS STORAGE;

EID: 28844432050     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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9. T. Li, et al, Integr. Ferroelectr. 48, 91 (2002).
10. T.C. MacLeod and F.D. Ho, Integr. Ferroelectr. 49, 51 (2002).
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12. D.P. Chu, US Patent No 6,498,742 (2002).