The effect of thickness on the dielectric properties of highly (111) oriented Pb(Zr0.53Ti0.47)O3 thin films prepared by a simple sol-gel route

Microelectronic Engineering

Volumn 65, Issue 4, 2003, Pages 387-393

  Tang, X G ^a,c,d   Jiang, L L ^b   Ding, A L ^c  

^a HUNAN INSTITUTE OF ENGINEERING   (China)

^b GUANGDONG UNIVERSITY OF TECHNOLOGY   (China)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

^d HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Dielectric properties; Ferroelectric properties; Orientation; PZT; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; MICROSTRUCTURE; MORPHOLOGY; PERMITTIVITY; POLARIZATION; RAPID THERMAL ANNEALING; SOL-GELS; WATER; X RAY DIFFRACTION ANALYSIS;

DISSIPATION FACTOR;

THIN FILMS;

EID: 0038298785     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00006-6     Document Type: Article

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