Effect of thickness on ferroelectric properties of Bi3.25La 0.75Ti3O12 thin films on Pt/Ti/SiO 2/Si substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1315-1318

  Kim, Kyoung Tae ^a   Song, Sang Hun ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL IMAGING; DC MAGNETRON SPUTTERING; ELECTRON PROBE MICROANALYSIS; FIELD EMISSION SCANNING ELECTRON MICROSCOPE (FE-SEM);

CRYSTALLIZATION; DIFFRACTOMETERS; ENERGY DISPERSIVE SPECTROSCOPY; ETCHING; FERROELECTRIC THIN FILMS; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; PERMITTIVITY; PLATINUM; POLARIZATION; REMANENCE; SCANNING ELECTRON MICROSCOPY; SILICA; SPIN COATING; TITANIUM; X RAY DIFFRACTION ANALYSIS;

BISMUTH COMPOUNDS;

EID: 4344717127     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1759350     Document Type: Conference Paper

References (15)

1. J. F. Scott and C. A. Araujo, Science 246, 1400 (1989).
2. J. F. Scott, Jpn. J. Appl. Phys., Part 1 38, 2272 (1999).
3. H. Tankaka and T. Kiwai, Jpn. J. Appl. Phys., Part 1 34, 5146 (1995).
4. B. H. Park, B. S. Kang, S. D. Bu, T. W. Non, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
5. U. Chon, G. C. Yi, and H. M. Jang, Appl. Phys. Lett. 78, 658 (2001).
6. Y. Sakashita, H. Segawa, K. Tominaga, and M. Okada, J. Appl. Phys. 73, 7857 (1993).
7. J. J. Lee, C. L. Thio, and S. B. Desu, J. Appl. Phys. 78, 5073 (1995).
8. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994).
9. J. F. M. Cillessen, M. W. J. Prins, and R. M. Wolf, J. Appl. Phys. 81, 2777 (1997).
10. E. V. Bursian, Fiz. Tverd. Tela 12, 1850 (1970).
11. K. T. Kim, C. I. Kim, D. H. Kang, and I. W. Shim, Thin Solid Films 422, 234 (2002).
12. X-ray Diffraction, edited by B. E. Warren (Dover, New York, 1990), p. 257.
13. T. Kim, J. Oh, B. Park, and K. S. Hong, Appl. Phys. Lett. 76, 3043 (2000).
14. A. K. Tagantsev, Ferroelectrics 184, 79 (1996).
15. H. N. Lee and D. Hesse, Appl. Phys. Lett. 80, 1040 (2001).