Carbon nanotubes and semiconductor nanowires for active-matrix backplanes

Journal of the Society for Information Display

Volumn 15, Issue 8, 2007, Pages 595-600

  Pribat, D ^a   Cojocaru, C S ^a   Gowtham, M ^a   Eude, L ^a   Rondavalli, P ^b   Legagneux, P ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

Active matrix backplanes; Carbon nanotubes; Porous anodic alumina templates; Semiconductor nanowires

Indexed keywords

ALUMINUM SHEET; CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; GERMANIUM; MOLECULAR ELECTRONICS; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; NANOWIRES; NETWORK PROTOCOLS; ORE TREATMENT; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SENSOR NETWORKS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

ACTIVE-MATRIX BACKPLANES; GE NANOWIRES; LOW TEMPERATURES; MATRIX BACKPLANES; NANOMATERIALS; NEW CLASSES; POROUS ANODIC ALUMINA TEMPLATES; RANDOM NETWORKS; SEMICONDUCTOR NANOWIRES;

CARBON NANOTUBES;

EID: 38649108038     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.2770861     Document Type: Conference Paper

References (44)

1. M J Powel, C van Berkel, and J R Hughes, "Time and temperature dependence of instability mechanisms in amorphous silicon TFTs," Appl Phys Lett 54, 1323 (1989).
2. D Pribat, "An overview of laser crystallisation processes and techniques for LTPS," Proc IMID '03, 50 (2003).
3. See, for example, C D Dimitrakopoulos and D J Mascaro, "Organic thin-film transistors: A review of recent advances," IBM J Res Develop 45, 11 (2001);
4. C Reese, M Roberts, M-m Ling, and Z Bao, "Organic thin film transistors," Materials Today, 20 (September 2004);
5. A Dodabalapur, "Organic and polymer transistors for electronics," Materials Today, 24 (April 2006).
6. Physical Properties of Carbon Nanotubes, R Saito, G Dresselhaus, and M S Dresselhaus, eds. (Imperial College Press, 1998).
7. E Minoux et al, "Achieving high-current carbon nanotube emitters," Nano Lett 5, 2135 (2005).
8. A Loiseau, X Blase, J-Ch Charlier, P Gadelle, C Journet, Ch Laurent, and A Peignet, in: Understanding Carbon Nanotubes, A Loiseau, P Launois, P Petit, S Roche, and J-P Salvetat, eds. (Springer Lecture Notes in Physics, Springer, 2006), pp. 49-130.
9. Y-S Min, E J Bae, B S Oh, D Kang, and W Park, "Low-temperature growth of single-walled carbon nanotubes by water plasma chemical vapor deposition," J Am Chem Soc 127, 12498 (2005).
10. R C Haddon, J Sippel, A G Rinzler, and F Papadimitrakopoulos, "Purification and separation of carbon nanotubes," MRS Bulletin, 252 (April 2004).
11. P G Collins, M S Arnold, and Ph Avouris, "Engineering carbon nanotubes and nanotube circuits using electrical breakdown," Science 292, 706 (2001).
12. A Javey et al, "High-? dielectrics for advanced carbon nanotube transistors and logic gates," Nature Materials 1, 241 (2002).
13. A Javey et al, "Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics," Nano Lett 4, 447 (2004).
14. A Javey, J Guo, Q Wang, M Lundstrom, and H Dai, "Ballistic carbon nanotube field-effect transistors," Nature 424, 654 (2003).
15. A Javey, P Qi, Q Wang, and H Dai, "Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography," Proc Nat Acad Sci 101, 13408 (2004).
16. S Heinze et al, "Carbon nanotubes as Schottky barrier transistors," Phys Rev Lett 89, 106801 (2002).
17. V Derycke, R Martel, J Appenzeller, and Ph Avouris, "Carbon nanotube inter and intra molecular logic gates," Nano Lett 1, 453 (2001).
18. H Dai, A Javey, E Pop, DMann,WKim, and Y Lu, "Electrical transport properties and field effect transistors of carbon nanotubes," Nano 1, 1 (2006).
19. Ph Avouris and Jia Chen, Materials Today 9, No. 10, 46 (October 2006).
20. V C Moore, M S Strano, E H Haroz, R H Hauge, and R Smalley, Nano Lett 3, 1379 (2003).
21. M A Meitl, Y Zhou, A Gaur, S Jeon, M L Usrey, M S Strano, and J Rodgers, Nano Lett 4, 1643 (2004).
22. E S Snow, J P Novak, P M Campbell, and D Park, "Random networks of carbon nanotubes as an electronicmaterial," Appl Phys Lett 82, 2145 (2003).
23. S Kumar, J Y Murthy, and M A Alam, "Percolating conduction in finite nanotube networks," Phys Rev Lett 95, 066802 (2005).
24. S Kumar, J Y Murthy, and M A Alam, "Performance of carbon nanotube-dispersed thin-film transistors," Appl Phys Lett 89, 143501 (2006).
25. E Bekyarova, M E Itkis, N Cabrera, B Zhao, A Yu, J Gao, and R Haddon, "Electronic properties of single-walled carbon nanotube networks," J Am Chem Soc 127, 5990 (2005).
26. Z Wu, Z Chen, X Du, J M Logan, J Sippel, M Nikolu, K Kamaras, J R Reynolds, D B Tanner, A F Hebard, and A G Rinzler, "Transparent, conductive carbon nanotube films," Science 305, 1273 (2004).
27. Y H Lee, H Z Geng, K K Kim, Y I Song, K Lee, G Y Kim, H K Choi, N T Xuyen, and K H An, "Carbon nanotube films for flexible transparent conducting electrodes," 26th IDRC, 21 (2006).
28. R T Weitz, U Zschieschang, F Effenberger, H Klauk, M Burghard, and K Kern, Nano Lett 7, 22 (2007).
29. K Bradley, J C P Gabriel, and G Grüner, "Flexible nanotube electronics," Nano Lett 3, 1353 (2003).
30. E S Snow et al, "Carbon nanotube networks: nanomaterial for macroelectronic applications," J Vac Sci Technol B22, 1990 (2004).
31. S-H Hur et al, "Extreme bendability of single-walled carbon nanotube networks transferred from high temperature growth substrates to plastic and their use in thin-film transistors," Appl Phys Lett 86, 243502 (2005).
32. T Takenobu et al, "High-performance transparent flexible transistors using carbon nanotube films," Appl Phys Lett 88, 033511 (2005).
33. R S Wagner, Whisker Technology (Wiley & Sons, 1970), p. 47.
34. Y Wang, V Schmidt, S Senz, and U Gosele, "Epitaxial growth of silicon nanowires using an aluminium catalyst," Nature Nanotechnology 1, 186 (2006).
35. Y Cui et al, "High performance silicon nanowire field effect transistors," Nano Lett 3, 149 (2003).
36. X Duan et al, "High performance thin-film transistors using semiconductor nanowires and nanoribbons," Nature 425, 274 (2003).
37. J Goldberger et al, "Silicon vertically integrated nanowire field effect transistors," Nano Lett 6, 973 (2006).
38. P Yang, "Wires on water," Nature 425, 243 (2003).
39. C Cojocaru et al, "Conformal anodic oxidation of aluminium thin films," Nano Lett 5, 675 (2005).
40. D Pribat, C Cojocaru, and A Rumyantseva, "Lateral templates for the controlled fabrication of carbon nanotube and nanowire field effect transistors," Proc 1st International TFT Conference (ITC 2005), 160 (2005).
41. K-K Lew and J M Redwing, "Growth characteristics of silicon nanowires synthesised by VLS growth in nanoporous alumina templates," J Cryst Growth 254, 14 (2003).
42. K K Lew et al, Appl Phys Lett 85, 3101 (2004).
43. D Pribat, "The use of thin silicon films in flat panel displays," Materials Science Forum 455-456, 56 (2004).
44. D Pribat and C Cojocaru, "Nanowire-based active-matrix backplanes for the control of large-area X-ray imagers," Nucl Instr Meth A 563, 82 (2006).