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Volumn 11, Issue 7, 1995, Pages 685-690
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Electrical activtty of extended defects and getteiing of metallic impurities in silicon
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DEFECTS;
DISLOCATIONS (CRYSTALS);
ELECTRON BEAMS;
HETEROJUNCTIONS;
IMPURITIES;
METALS;
TEMPERATURE DISTRIBUTION;
ELECTRICAL ACTIVITIES;
ELECTRON-BEAM-INDUCED CURRENT;
ELECTRON-BEAM-INDUCED CURRENT TECHNIQUES;
METALLIC IMPURITY;
RECOMBINATION ACTIVITY;
RECOMBINATION CENTRES;
TEMPERATURE DEPENDENCE;
TEMPERATURE DEPENDENT;
CRYSTAL IMPURITIES;
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EID: 0000909291
PISSN: 02670836
EISSN: 17432847
Source Type: Journal
DOI: 10.1080/17432847.1995.11945564 Document Type: Article |
Times cited : (47)
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References (31)
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