Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 277-282

  Martinez Limia, Alberto ^a   Pichler, Peter ^a,b   Steen, Christian ^b   Paul, Silke ^c   Lerch, Wilfried ^c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Arsenic clustering; Arsenic deactivation; Arsenic diffusion; Arsenic precipitation; Arsenic segregation; Flash annealing; Silicon; Spike annealing

Indexed keywords

ION IMPLANTATION; PHASE INTERFACES; PRECIPITATION (CHEMICAL); THERMAL DIFFUSION; VACANCIES; ANNEALING; ARSENIC COMPOUNDS; CHEMICAL ACTIVATION; DEFECTS; DIFFUSION; INTERFACE STATES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON; SILICON OXIDES;

ARSENIC CLUSTERING; ARSENIC DEACTIVATION; ARSENIC DIFFUSION; ARSENIC PRECIPITATION; ARSENIC SEGREGATION; FLASH ANNEALING; SOLID SOLUBILITY; SPIKE ANNEALING; ARSENIC-VACANCY COMPLEXES; ELECTRICAL ACTIVITIES; IMPLANTATION ENERGIES; SOLID PHASE EPITAXY;

ACTIVATION ENERGY; C (PROGRAMMING LANGUAGE);

EID: 38549109498     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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