Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si

Journal of Applied Physics

Volumn 84, Issue 11, 1998, Pages 5997-6002

  Krishnamoorthy, V ^a   Moller, K ^a   Jones, K S ^a   Venables, D ^b   Jackson, J ^c   Rubin, L ^c  

^a University of Florida   (United States)

^b North Carolina State University   (United States)

^c EATON CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004515091     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368896     Document Type: Article

References (11)

1. D. Nobili, S. Solmi, A. Parsini, M. Derdour, A. Armigliato, and L. Moro, Phys. Rev. B 49, 2477 (1994).
2. Y. Kim, H. Z. Massoud, and R. B. Fair, J. Electron. Mater. 18, 143 (1989).
3. A. Armigliato and A. Parsini, J. Mater. Res. 6, 1701 (1991).
4. A. Armigliato, A. Parsini, M. Derdour, P. Lazzari, L. Moro, D. Nobili, and S. Solmi, Solid State Phenom. 19&20, 393 (1991).
5. A. Parsini, D. Nobili, A. Armigliato, M. Derdour, L. Moro, and S. Solmi, Appl. Phys. A: Solids Surf. 54, 221 (1992).
6. J. Said, H. Jaouen, G. Ghibaudo, and I. Stoemenos, Phys. Status Solidi A 117, 99 (1990).
7. A. Parsini, A. Bourret, A. Armagliato, M. Servidori, S. Solmi, R. Fabbri, J. R. Regnard, and J. L. Allain, J. Appl. Phys. 67, 2320 (1990).
8. P. M. Rousseau, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. 65, 578 (1994).
9. S. N. Hsu and L. J. Chen, Nucl. Instrum. Methods Phys. Res. B 55, 620 (1991).
10. S. N. Hsu and L. J. Chen, Appl. Phys. Lett. 55, 2304 (1989).
11. J. W. Mayer and S. S. Lau, Electronic Materials Science: For Integrated Circuits in Si and GaAs (McMillan, New York, 1990).