Measurement of copper in P-type silicon using charge-carrier lifetime methods

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 643-648

  Yli Koski, M ^a   Savin, H ^a   Saarnilehto, E ^a   Haarahiltunen, A ^a   Sinkkonen, J ^a   Berenyi, G ^b   Pavelka, T ^b  

^a AALTO UNIVERSITY   (Finland)

^b SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

Author keywords

Copper; Silicon; SPV; PCD

Indexed keywords

CARRIER LIFETIME; DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

BULK SILICON; COPPER PRECIPITATE; DETECTION SENSITIVITY; P-TYPE SILICON; RECOMBINATION ACTIVITY;

COPPER;

EID: 36049014341     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.643     Document Type: Conference Paper

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