Material origins of line-edge roughness: Monte-Carlo simulations and scaling analysis

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 2, 2004, Pages 773-781

  Patsis, G P ^a   Constantoudis, V ^a   Gogolides, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; DISSOLUTION; ETCHING; MOLECULAR WEIGHT; MONTE CARLO METHODS; POLYMERIZATION; SURFACE ROUGHNESS;

CRITICAL DIMENSIONS (CD); ETCH RATES (ER); LINE-EDGE ROUGHNESS (LER); ROOT MEAN SQUARE (RMS);

PHOTORESISTS;

EID: 3843128503     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.535202     Document Type: Conference Paper

References (13)

1. G. P. Patsis, V. Constantoudis, A. Tserepi, E. Gogolides, G. Grozev and T. Hoffmann, "Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis", Microelectronic Engineering, 67-68, 319 (2003).
2. G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, "Quantification of Line Edge Roughness of Photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images" J. Vac. Sci. Technol. B, 21(3), 1008 (2003).
3. V. Constantoudis, G. P. Patsis, A. Tserepi, and E. Gogolides, "Quantification of Line Edge Roughness of Photoresists. Part II: Scaling and Fractal Analysis and the Best Roughness Descriptors" J. Vac. Sci. Technol. B, 21(3), 1019 (2003).
4. V. Constantoudis, G. P. Patsis, and E. Gogolides, "Photo-Resist Line-Edge Roughness Analysis Using Scaling Concepts", Proc. SPIE 5038 (2003). To appear in JM3.
5. B. J. Ryce, H. Cao, M. Chundhok, R. Mealey, "Effects of processing parameters on line-width roughness", Proc. SPIE 5039, 384 (2003).
6. J. Cobb, S. Rauf, A. Thean, S. Dakhina-Murthy, T. Stephens, C. Parker, R. Peters, and V. Rao, "Controlling line-edge roughness to within reasonable limits", Proc. CPIE 5039, 376 (2003).
7. S. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, and P. Rao, "Study of gate line-edge roughness in 50nm bulk MOSFET devices", Proc. SPIE 4689, 733 (2002).
8. S. Rauf, P. J. Stout, J. Cobb, "Modeling the impact of photoresist trim etch process on phototresist surface roughness", J. Vac. Sci. Technol. B 21(2), 655 (2003).
9. L. W. Flanagin, V. K. Singh, and C. G. Willson, "Molecular Model of Phenolic Polymer Dissolution in Photolithography, J. Pol. Sci. Part B, 37, 2103 (1999).
10. S. D. Burns, G. M. Schmid, P. C. Tsiartas, and C. G. Willson, "Advancements to the Critical Ionization Dissolution Model", J. Vac. Sci. Technol. B, 20(2), 537 (2002).
11. G. P. Patsis, N. Glezos, and E. Gogolides, "Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists", J. Vac. Sci. Technol. B 21, 254 (2003).
12. G. P. Patsis, and E. Gogolides, "Stochastic Simulation of Photoresist Film Dissolution I. Model Description and Simulation of Dissolution Rate". To be submitted in JVSTB.
13. G. P. Patsis, and E. Gogolides, "Stochastic Simulation of Photoresist Film Dissolution II. A Fast Dissolution Algorithm for the Simulation of Side-Wall Roughness". To be submitted in JVSTB.