메뉴 건너뛰기




Volumn 5038 II, Issue , 2003, Pages 901-909

Photo-resist line-edge roughness analysis using scaling concepts

Author keywords

Correlation length; Edge de tection; Fractal dimension; Line edge roughness; Line width roughness; Noise smoothing filters; Photoresist; Roughness exponent; Scal ing analysis; Scanning electron microscope images

Indexed keywords

ALGORITHMS; EDGE DETECTION; FRACTALS; IMAGE ANALYSIS; SCANNING ELECTRON MICROSCOPY; SPATIAL VARIABLES MEASUREMENT; SURFACE ROUGHNESS;

EID: 0141834954     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482809     Document Type: Conference Paper
Times cited : (23)

References (12)
  • 1
    • 0037207710 scopus 로고    scopus 로고
    • Etching behaviour of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
    • A. Tserepi, G. Cordoyiannis, G. P. Patsis, V. Constantoudis, and E. Gogolides, "Etching behaviour of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane", J. Vac. Sci. Technol. B 21, 174-182, 2003.
    • (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 174-182
    • Tserepi, A.1    Cordoyiannis, G.2    Patsis, G.P.3    Constantoudis, V.4    Gogolides, E.5
  • 2
    • 0038117768 scopus 로고    scopus 로고
    • Quantification of line-edge roughness of photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images
    • G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, "Quantification of line-edge roughness of photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images", Accepted for publication in J. Vac. Sci. Technol. B 2003.
    • (2003) J. Vac. Sci. Technol. B
    • Patsis, G.P.1    Constantoudis, V.2    Tserepi, A.3    Gogolides, E.4
  • 3
    • 0038457081 scopus 로고    scopus 로고
    • Quantification of line edge roughness of photoresists. Part II: Scaling and fractal analysis and the best roughness descriptors
    • V. Constantoudis, G. P. Patsis, A. Tserepi, and E. Gogolides, "Quantification of Line Edge Roughness of Photoresists. Part II: Scaling and Fractal Analysis and the Best Roughness Descriptors", Accepted for publication in J. Vac. Sci. Technol. B 2003.
    • (2003) J. Vac. Sci. Technol. B
    • Constantoudis, V.1    Patsis, G.P.2    Tserepi, A.3    Gogolides, E.4
  • 4
    • 0038359112 scopus 로고    scopus 로고
    • Roughness analysis of lithographically produced nanostructures: Off line measurement, scaling analysis and Monte Carlo simulations
    • Spring
    • G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, "Roughness analysis of lithographically produced nanostructures: off line measurement, scaling analysis and Monte Carlo simulations", To appear in Microelectronic Engineering, Spring 2003.
    • (2003) Microelectronic Engineering
    • Patsis, G.P.1    Constantoudis, V.2    Tserepi, A.3    Gogolides, E.4
  • 6
    • 0036029137 scopus 로고    scopus 로고
    • Study of gate line edge roughness effects in 50nm bulk MOSFET devices
    • S. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, and P. Rao, "Study of Gate Line Edge Roughness Effects in 50nm Bulk MOSFET Devices", Proceedings of SPIE, 4689, pp 733-741, 2003.
    • (2003) Proceedings of SPIE , vol.4689 , pp. 733-741
    • Xiong, S.1    Bokor, J.2    Xiang, Q.3    Fisher, P.4    Dudley, I.5    Rao, P.6
  • 7
    • 0003161077 scopus 로고    scopus 로고
    • Analysis of statistical fluctuation due to line edge roughness in sub-0.1 μm MOSFETS
    • Seattle, USA
    • S. Kaya, A.R. Brown, A. Asenov, D. Magot, and T. Linton, "Analysis of Statistical Fluctuation due to Line Edge Roughness in sub-0.1 μm MOSFETS", Proc. SISPAD, pp. 78-81, Seattle, USA (2001).
    • (2001) Proc. SISPAD , pp. 78-81
    • Kaya, S.1    Brown, A.R.2    Asenov, A.3    Magot, D.4    Linton, T.5
  • 8
    • 0035450052 scopus 로고    scopus 로고
    • Metrology method for the correlation of line edge roughness for different resists before and after etch
    • S. Winkelmeier, M. Sarstedt, M. Ereken, M. Goethals, K. Ronse, "Metrology method for the correlation of line edge roughness for different resists before and after etch", Microelec. Engin. 57-58, 665-672, 2001.
    • (2001) Microelec. Engin. , vol.57-58 , pp. 665-672
    • Winkelmeier, S.1    Sarstedt, M.2    Ereken, M.3    Goethals, M.4    Ronse, K.5
  • 10
    • 0033260747 scopus 로고    scopus 로고
    • Comparison of metrology methods for quantifying the line edge roughness of patterned features
    • C. Nelson, S. C. Palmateer, A. R. Forte, and T. M. Lyszczarz, "Comparison of metrology methods for quantifying the line edge roughness of patterned features" J. Vac. Sci. Technol. B 17 (6), pp. 2488-2498, 1999.
    • (1999) J. Vac. Sci. Technol. B , vol.17 , Issue.6 , pp. 2488-2498
    • Nelson, C.1    Palmateer, S.C.2    Forte, A.R.3    Lyszczarz, T.M.4
  • 11
    • 0141621030 scopus 로고    scopus 로고
    • Characterization of amorphous and crystalline rough surface: Principles and applications
    • Academic Press
    • B.Y. Zhao, G.-C. Wang, and T.-M. Lu, "Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications", Experimental Methods in the Physical Sciences, 37, Academic Press, 2001.
    • (2001) Experimental Methods in the Physical Sciences , vol.37
    • Zhao, B.Y.1    Wang, G.-C.2    Lu, T.-M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.