Optimization of process condition to balance MEF and OPC for alternating PSM - Control of forbidden pitches

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691, Issue 1, 2002, Pages 240-246

  Kim, Keeho ^a   Choi, Y S ^a   Socha, Robert ^b   Flagello, Donis ^b  

^a TEXAS INSTRUMENTS   (United States)

^b ASML   (Netherlands)

Author keywords

Alternating PSM; ArF lithography; Forbidden pitch; High NA lithography; Optical proximity correction; Optical proximity effect

Indexed keywords

COMPUTER SIMULATION; IMAGING SYSTEMS; LENSES; MASKS; PHASE SHIFT; SCANNING ELECTRON MICROSCOPY;

OPTICAL PROXIMITY EFFECTS;

PHOTOLITHOGRAPHY;

EID: 0036411422     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474573     Document Type: Article

References (2)

1. M.E. Kling et al., "Practicing Extension of 248 DUV Optical Lithography Using Trim-Mask PSM", SPIE Proceedings 3679-01, 19999.
2. A.K. Wong, R.A. Ferguson, L.W. Liebmann, S.M. Mansfield, A.F. Molless and M.O. Neisser" Lithographic effects of mask critical dimension error", SPIE Proceedings 3334, p106, 1998.