Is it possible to improve MEEF?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1383-1391

  Oh, Seok Hwan ^a   Kim, Hyoung Kook ^a   Kim, Dae Joung ^a   Kim, Young Seok ^a   Suh, Chun Suk ^a   Koh, Yong Sun ^a   Song, Chang Lyong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

DoF; K1 Factor; Layout; MEEF; Photo resist

Indexed keywords

ERROR ANALYSIS; INTEGRATED CIRCUIT LAYOUT; LIGHT TRANSMISSION; MASKS;

MASK ERROR ENHANCEMENT FACTORS (MEEF);

PHOTORESISTS;

EID: 0036410395     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474522     Document Type: Conference Paper

References (6)

1. S. Hsu, "A Rule-Model OPC for low MEEF 130nm KrF Lithography", Proc. SPIE Vol. 4409, p. 172-185.
2. F. Schellenberg, "MEEF in theory and practice", Proc. SPIE Vol. 3873, p. 189-202.
3. D. Kang, "Manufacturing considerations for MEEF minimization and process window optimization for 180-nm Contact Holes", Proc. SPIE Vol. 4404, p. 170-179.
4. D. Chung, "Prediction of MEEF using a simple model and MEEF enhancement parameters", Proc. SPIE Vol. 4409, p. 94-100.
5. M. Plat, "Resolution capability and the mask error enhancement function(MEEF) for ArF and KrF lithography", Proc. SPIE Vol. 4346, p. 851-857.
6. J. Sheats, Microlithography science and technology, p.202-205, Marcel Dekker, NewYork.