MEF studies for attenuated phase shift mask for sub 0.13 um technology using 248 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1366-1372

  Tan, Sia Kim ^a   Lin, Qunying ^a,b   Chua, Gek Soon ^a   Quan, Chenggen ^a   Tay, Cho Jui ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

0.10 um; 248 nm; Assist features; MEF; Phase shift mask

Indexed keywords

ELECTROMAGNETIC WAVE ATTENUATION; IMAGE ENHANCEMENT; MASKS; PHASE SHIFT;

PHASE SHIFT MASKS;

LITHOGRAPHY;

EID: 0036410158     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474520     Document Type: Article

References (5)

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