Atomistic modeling of gate-all-around Si-nanowire field-effect transistors

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3159-3167

  Pecchia, Alessandro ^a,b   Salamandra, Luigi ^b   Latessa, Luca ^b   Aradi, Bálint ^c   Frauenheim, Thomas ^c   Di Carlo, Aldo ^b  

^a INFM   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

Coherent transport; Field effect transistors; Field effect transistor (FET); Green's function; Nanostructured materials; Quantum capacitance; Si nanowire (SiNW)

Indexed keywords

DENSITY FUNCTIONAL THEORY; GREEN'S FUNCTION; NANOWIRES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

ATOMISTIC SIMULATION; QUANTUM CAPACITANCE; SILICON NANOWIRE;

FIELD EFFECT TRANSISTORS;

EID: 38149091847     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908883     Document Type: Article

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