High-reliability ONO gate dielectric for power MOSFETs

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 677-680

  Tanimoto, Satoshi ^a   Tanaka, Hedeaki ^a   Hayashi, Tetsuya ^a   Shimoida, Yoshio ^a   Hoshi, Masakatsu ^a   Mihara, Teruyoshi ^a  

^a NISSAN MOTOR CO   (Japan)

Author keywords

Dielectric breakdown; Gate oxide; MOSFET; ONO; Reliability; SiC; TDDB

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; FILM THICKNESS; GATE DIELECTRICS; RELIABILITY THEORY;

CONSTANT CURRENT STRESSES; LEAKAGE CURRENT DENSITY; ROOM TEMPERATURE;

MOSFET DEVICES;

EID: 34248558980     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.677     Document Type: Conference Paper

References (7)

1. T. Watanabe, A. Menjoh, T. Mochizuki, S. Shinozaki and O. Ozawa, Proc. IEEE 28th IRPS, (1985), p. 18.
2. E. Suzuki, H. Higashi, K. Ishii and Y. Hayashi, IEEE Transact. Electron Dev.Vol. ED-30 (1983), p. 122.
3. G. Samachisa, C.-S. Su, Y.-S. Kao, G. Smarandoiu, S.-Y.M Wang, T. Wong and C. Hu, IEEE J. Solid-State Circuits Vol. SC-22 (1987), p. 176.
4. L.A. Lipkin and J.L. Palmour, IEEE Transact. Electron Dev.Vol. ED-46 (1999), p. 525.
5. X.W. Wang, Z.J. Luo and T.-P. Ma, IEEE Transact. Electron Dev. Vol. ED-47 (2000), p. 458.
6. S. Tanimoto, N. Kiritani, M. Hoshi, H. Okushi and K. Arai, Mater. Sci. Forum Vols. 443-436 (2003), p. 725.
7. N. Kiritani, M. Hoshi, S. Tanimoto, K. Adachi, S. Nishizawa, T. Yatsuo, H. Okushi and K. Arai, Mater. Sci. Forum Vols. 443-436 (2003), p. 669.