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Volumn 240, Issue 3-4, 2002, Pages 333-339
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Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy
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Author keywords
A1. Faceting; A2. Lateral growth; A3. Molecular beam epitaxy; A3. Selective epitaxy
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Indexed keywords
COALESCENCE;
DEPOSITION;
FREE ENERGY;
MASKS;
NANOSTRUCTURED MATERIALS;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICA;
SURFACES;
LATERAL GROWTH;
MOLECULAR BEAM EPITAXY;
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EID: 0036570887
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)00867-9 Document Type: Article |
Times cited : (12)
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References (10)
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