Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 430-434

  Yuan, J S ^a   Ma, J ^a  

^a University of Central Florida   (United States)

Author keywords

Breakdown (BD); Class E power amplifier (PA); MOS devices; Power efficiency; RF stress

Indexed keywords

ELECTRIC POTENTIAL; ENERGY EFFICIENCY; LEAKAGE CURRENTS; POWER AMPLIFIERS;

CLASS-E POWER AMPLIFIER; POWER EFFICIENCY;

MOS DEVICES;

EID: 37749016604     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911092     Document Type: Article

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