The impact of postbreakdown gate leakage on MOSFET RF performances

IEEE Electron Device Letters

Volumn 22, Issue 12, 2001, Pages 585-587

  Pantisano, Luigi ^a,b   Cheung, K P ^a,c  

^a IEEE   (Belgium)

^b IMEC   (Belgium)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

High frequency; MOSFET; Oxide breakdown; Reliability

Indexed keywords

GATE OXIDE BREAKDOWN;

ELECTRIC BREAKDOWN; GAIN MEASUREMENT; GATES (TRANSISTOR); IMPEDANCE MATCHING (ELECTRIC); LEAKAGE CURRENTS; MATHEMATICAL MODELS;

MOSFET DEVICES;

EID: 0035691727     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974585     Document Type: Article

References (9)

1. Reliability projection for ultra-thin oxides at low voltage
2. Ultra-thin gate dielectrics: They break down, but do they fail?
3. Reliability: A possible showstopper for oxide thickness scaling?
4. Impact of MOSFET oxide breakdown on digital circuit operation and reliability
5. Relation between breakdown mode and breakdown location in short channel NMOSFET's and its impact on reliability specifications
6. RF circuit performance degradation due to soft breakdown and hot carrier effect in 0.18 μm CMOS technology
7. An improved de-embedding technique for on-wafer high-frequency characterization
8. MOS transistor modeling for RF IC design