RF power potential of 90 nm CMOS: Device options, performance, and reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 455-458

  Scholvin, Jörg ^a   Greenberg, David R ^b   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE OPTIONS; GATE-OXIDE LOGIC DEVICES; POWER PERFORMANCE; POWER POTENTIAL; CMOS DEVICES; COMPARATIVES STUDIES; DEVICE PERFORMANCE; DEVICE RELIABILITY; FOUNDRY TECHNOLOGY; PERFORMANCE AND RELIABILITIES; RF POWER; STATE OF THE ART;

CURRENT DENSITY; ELECTRIC POTENTIAL; INPUT OUTPUT PROGRAMS; LOGIC GATES; MICROPROCESSOR CHIPS; POWER AMPLIFIERS; RELIABILITY THEORY; CMOS INTEGRATED CIRCUITS; DIGITAL DEVICES; GATES (TRANSISTOR); LOGIC DEVICES; MOS DEVICES;

CMOS INTEGRATED CIRCUITS; POWER AMPLIFIERS;

EID: 21644473397     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Ferndahl, et al., Microwave and Wireless Components Letters, IEEE, Volume: 13, Issue: 12, Dec. 2003, pp. 523-525
2. RF2681, preliminary product data sheet, RF Micro Devices, Rev A8 040512, pp. 529-536
3. E. Chen, et al., IEEE RAWCON, 2000, pp. 163-166