Can praseodymium oxide be an alternative high-K gate dielectric material for silicon integrated circuits?

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2001, Pages 1-10

  Mussig H J ^a   Osten, H J ^a   Bugiel, E ^a   Dabrowski, J ^a   Fissel, A ^a   Guminskaya, T ^a   Ignatovich, K ^a   Liu, J P ^a   Zaumseil, P ^a   Zavodinsky, V ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; DIELECTRIC MATERIALS; FILM GROWTH; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; PERMITTIVITY; PRASEODYMIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0035568121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)