Comparison of effects between large-area-beam ELA and SPC on TFT characteristics

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1454-1458

  Noguchi, Takashi ^a,b   Tang, Andrew J ^b   Tsai, Julie A ^c   Reif, Rafaël ^a,c  

^a IEEE

^b Massachusetts Institute of Technology Cambridge   (United States)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; LASER BEAM EFFECTS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHANNEL DIMENSIONS; LARGE AREA BEAM; SOLID PHASE CRYSTALLIZATION (SPC);

THIN FILM TRANSISTORS;

EID: 0030243736     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535332     Document Type: Article

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