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Volumn 2, Issue , 2006, Pages 1612-1615

On the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of A-SI:H films

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLITES; CRYSTALLIZATION KINETICS; GRAIN GROWTH; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION;

EID: 41749118281     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279795     Document Type: Conference Paper
Times cited : (2)

References (12)
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    • Iverson, R.B.1    Reif, R.2
  • 2
    • 0031274441 scopus 로고    scopus 로고
    • Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass
    • J. N. Lee, B. J. Lee, D. G. Moon, and B. T. Ahn, "Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass", Jpn. J. Appl. Phys. 36, 6862 (1997).
    • (1997) Jpn. J. Appl. Phys , vol.36 , pp. 6862
    • Lee, J.N.1    Lee, B.J.2    Moon, D.G.3    Ahn, B.T.4
  • 3
    • 36549101401 scopus 로고
    • Effect of Substrate Temperature on Recrystallization of PECVD Amorphous Silicon Films
    • K
    • [K. Nakazawa, and K. Tanaka, "Effect of Substrate Temperature on Recrystallization of PECVD Amorphous Silicon Films", J. Appl. Phys. 68, 1029 (1990).
    • (1990) J. Appl. Phys , vol.68 , pp. 1029
    • Nakazawa1    Tanaka, K.2
  • 4
  • 5
    • 31644449160 scopus 로고    scopus 로고
    • Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth
    • A.H. Mahan, B. Roy, R.C. Reedy Jr., D.W. Readey, and D.S. Ginley, "Rapid Thermal Annealing of HWCVD a-Si:H Films: the Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth", J. Appl. Phys. 99, 023507 (2006).
    • (2006) J. Appl. Phys , vol.99 , pp. 023507
    • Mahan, A.H.1    Roy, B.2    Reedy Jr., R.C.3    Readey, D.W.4    Ginley, D.S.5
  • 7
    • 85080546998 scopus 로고    scopus 로고
    • H of ∼ 12 at.%.
    • H of ∼ 12 at.%.
  • 8
    • 85080474533 scopus 로고    scopus 로고
    • Grain Nucleation and Grain Growth during Crystallization of HWCVD a-Si:H Films
    • Spring, press
    • S.P. Ahrenkiel, B. Roy, D.S. Ginley, and A.H. Mahan, "Grain Nucleation and Grain Growth during Crystallization of HWCVD a-Si:H Films", 2006 Spring MRS Conference (Symposium A), in press.
    • (2006) MRS Conference (Symposium A)
    • Ahrenkiel, S.P.1    Roy, B.2    Ginley, D.S.3    Mahan, A.H.4
  • 10
    • 0026822155 scopus 로고
    • Axially Controlled Solid-Phase Crystallization of Amorphous Silicon
    • S. Hasegawa, T. Nakamura, and Y. Kurata, "Axially Controlled Solid-Phase Crystallization of Amorphous Silicon", Jpn. J. Appl. Phys. 31, 161 (1992).
    • (1992) Jpn. J. Appl. Phys , vol.31 , pp. 161
    • Hasegawa, S.1    Nakamura, T.2    Kurata, Y.3
  • 11
    • 0001031218 scopus 로고
    • Structural Information from the Raman Spectrum of Amorphous Silicon
    • D. Beeman, R. Tsu, and M.F. Thorpe, "Structural Information from the Raman Spectrum of Amorphous Silicon", Phys. Rev. B 32, 874 (1985).
    • (1985) Phys. Rev. B , vol.32 , pp. 874
    • Beeman, D.1    Tsu, R.2    Thorpe, M.F.3
  • 12
    • 33845463417 scopus 로고    scopus 로고
    • Large-grain Polycrystalline Silicon Films with Low Intragranular Defect Density by Low Temperature Solid-phase Crystallization without Underlying Oxide
    • X.-Z. Bo, N. Yao, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Large-grain Polycrystalline Silicon Films with Low Intragranular Defect Density by Low Temperature Solid-phase Crystallization without Underlying Oxide", J. Appl. Phys. 91, 2910 (2002).
    • (2002) J. Appl. Phys , vol.91 , pp. 2910
    • Bo, X.-Z.1    Yao, N.2    Shieh, S.R.3    Duffy, T.S.4    Sturm, J.C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.